The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Jun. 06, 2000
Akihide Kashiwagi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of forming an oxide film comprising the steps of; (A) generating a water vapor atmosphere in a process chamber in a state where partitioning means is closed, and transferring a substrate into a substrate transfer portion, (B) opening the partitioning means after the transfer of the substrate into the substrate transfer portion is completed, and transferring the substrate into the process chamber having the water vapor atmosphere, (C) thermally oxidizing a semiconductor layer on the surface of the substrate in the process chamber having the water vapor atmosphere, to form an oxide film having a predetermined thickness on the surface of the semiconductor layer, and (D) changing the atmosphere in the process chamber into an inert gas atmosphere, then transferring the substrate out of the process chamber, closing the partitioning means and transferring the substrate out of the substrate transfer portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile