The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Mar. 05, 1999
Richard K. Klein, Mountain View, CA (US);
Advanced Micro Devices, Inc, Sunnyvale, CA (US);
Abstract
A device structure and a method of forming the structure comprising a resistor in a via opening between adjacent levels of metallization of a conventional field effect transistor (FET) by using amphorous (&agr;) silicon between metal barrier layers, such as titanium tungsten and titanium nitride, at the via opening which is filled with a conductive material, such as tungsten said device structure and method enabling a conventional FET and resistor to only take the space of a conventional FET due to the unique properties of &agr;-silicon.
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