The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
Nov. 09, 1998
Tsung-Lung Li, Hsinchu, TW;
Acer Semiconductor Manufacturing Inc., Hsinchu, TW;
Abstract
A method of simulating a post-exposure bake (PEB) process for chemically amplified resists having photoacids and protection-sites comprises the following steps. First, the initial PEB parameters are input to represent a temperature-time history of the PEB process. Then, the reaction constants and a diffusion coefficient are input to represent the chemically amplified resists. Wherein the reaction constants are temperature-dependent, and the diffusion coefficient is temperature-dependent and protection-site-dependent in the entire course of the PEB simulation. The protection-site concentration of the chemically amplified resists is computed by using an implicit scheme, and the photoacid concentrations are computed in a space occupied by the chemically amplified resists based on the diffusion coefficient by using an implicit scheme.