The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
May. 22, 2000
Yamato Ishikawa, Wako, JP;
Honda Giken Kogyo Kabushiki Kaisha, Tokyo, JP;
Abstract
A high electron mobility transistor includes a channel layer for developing therein an electron gas layer having a substantially uniform electron gas density, and upper and lower high-resistance wide-band gap layers disposed respective over and beneath the channel layer, each of the upper and lower high-resistance wide-band gap layers having a silicon-doped planar layer disposed therein. A contact layer is disposed on the upper wide-band gap layer for contact with source and drain electrodes, the contact layer having a recess defined therein which divides the contact tact layer. A gate electrode of substantially T-shaped cross section is disposed in the recess, and a passivation film is disposed on an inner wall surface of the recess and a lower leg portion of the gate electrode, exposing an upper head portion of the gate electrode.