The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
Oct. 08, 1999
Applicant:
Inventors:
Assignee:
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13215 ;
U.S. Cl.
CPC ...
H01L 2/13215 ;
Abstract
By introducing a carefully controlled anneal step after the deposition of tungsten silicide (onto a layer of polysilicon) but before the deposition of a layer of silicon oxide, interaction between the tungsten silicide and a subsequently deposited layer of silicon oxide is greatly reduced or eliminated. This gives good values for the resistance of gate lines formed from the composite as well as for the contact resistance between the polysilicon and the tungsten silicide.