The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
Oct. 10, 2000
Horii Hideki, Kyungki-do, KR;
Abstract
Methods of forming integrated circuit capacitors include forming a first electrically conductive layer on a semiconductor substrate and forming a first electrically insulating layer on the first electrically conductive layer. The first electrically insulating layer and the first electrically conductive layer are then patterned to define an opening in the first electrically insulating layer and expose a sidewall of the first electrically conductive layer. A second electrically conductive layer is then electroplated into the opening, using the exposed sidewall of the first electrically conductive layer as an electroplating seed. The patterned first electrically insulating layer and at least a portion of the patterned first electrically conductive layer are then removed to define a first capacitor electrode as the electroplated second electrically conductive layer. A capacitor dielectric layer is then formed on the first capacitor electrode. A complete capacitor structure is then provided by forming a second capacitor electrode on the capacitor dielectric layer, opposite the first capacitor electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile