The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Jul. 15, 1999
Masaru Wakabayashi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A collector current and a ratio of current amplification which are to measure a punch through breakdown voltage (BVCEO) of a vertical bipolar transistor device are indicated as IC and hFE. A base current IB having 1% of IC/hFE or less is caused to flow to a base of the device. In the state in which the base current IB is injected into a base terminal, a constant voltage (VE) of a ground potential is applied to an emitter terminal and a voltage sweep is performed with a predetermined step width over a collector terminal. When the collector current reaches the current IC to measure the punch through breakdown voltage, the voltage sweep is stopped to measure the punch through breakdown voltage as a collector voltage VC. Consequently, a collector and emitter punch through breakdown voltage of the bipolar device can be accurately measured, and furthermore, the device can be prevented from breaking down when measuring the punch through breakdown voltage.