The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Oct. 08, 1999
Abstract
A flash memory cell and a method for fabricating the same are provided. A first conductive film exposing a predetermined area of a semiconductor substrate is formed on the semiconductor substrate, and a tunnel oxide and a first interlevel dielectric film are formed on the surface of the semiconductor substrate exposed by the first conductive film and on the surface of the first conductive film, respectively. A floating gate covering the tunnel oxide and extending to the upper portion of the first conductive film in the vicinity of the tunnel oxide is formed as a second conductive film, and a second interlevel dielectric film is formed on the surface of the floating gate. A third conductive film electrically connected to the first conductive film in the vicinity of the floating gate is formed on a second interlevel dielectric film, thereby forming a control gate electrode comprised of the first conductive film and the third conductive film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile