The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
May. 30, 1997
Niels Kramer, Eindhoven, NL;
Maarten J. H. Niesten, Eindhoven, NL;
Wilhelmus H. M. Lodders, Eindhoven, NL;
Gerrit Oversluizen, Eindhoven, NL;
U. S. Philips Corporation, New York, NY (US);
Abstract
The invention relates to an erasable non-volatile memory in which a diode is formed at each point of intersection between the x-selection lines (K,) and y-selection lines (R,), of which diode the anode and cathode are conductively connected to the x- and y-selection lines. The diodes are formed in hydrogenated amorphous silicon or silicon compounds such as amorphous S,Ge,. Writing takes place by means of a current pulse through selected diodes. The current in the forward direction becomes much lower, for example a few hundred times lower, than in diodes which are not selected, probably owing to degradation in the semiconductor material. The diodes may be returned to their original state again (i.e. be erased) through heating, for example at a temperature of 200° C. during 100 minutes. Preferably, the diodes are formed by Schottky diodes because the characteristic in the reverse direction does not (substantially) change in this type of diode. The Schottky diodes may be formed in the transitional region between the amorphous intrinsic semiconductor material (,) and the selection lines (K,).