The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2001

Filed:

Mar. 10, 1999
Applicant:
Inventor:

Kyo-Ho Moon, Kyongsangbuk-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract

The present invention relates to a method of etching a layer on a fabricated thin film transistor in liquid crystal display, which prevents failure of patterns by removing the residues generated from organic material in the air or the remainders of photoresist before patterning a layer. The present invention includes the steps of defining a photoresist pattern on a predetermined region of a layer on substrate, leaving an etch-resistant residue on at least a portion of the layer outside the predetermined region, removing residue by ashing with plasma, patterning the layer with an etchant, where the the photoresist pattern acts as an etch mask.


Find Patent Forward Citations

Loading…