The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Oct. 26, 1999
Applicant:
Inventor:
Chiou-Feng Chen, Cupertino, CA (US);
Assignee:
Actrans System Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
Nonvolatile memory cell and process in which a control gate or a thick dielectric film is used as a mask in the formation of a floating gate and also as a step in the formation and alignment of a select gate. The floating gate is relatively thin and has a side wall with a rounded curvature which, in some embodiments, serves as a tunneling window for electrons migrating to the select gate during erase operations. In other embodiments, the gate oxide beneath the floating gate is relatively thin, and the electrons tunnel through the gate oxide to the source region in the substrate below.