The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Feb. 25, 1999
Koji Arita, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of making a top electrode for a thin film capacitor with a multi-layer structure that includes a high dielectric oxide layer, a first conductive layer on the high dielectric oxide layer and having a high formability to a reactive ion etching, and a second conductive layer on the first conductive layer, the second conductive layer having a high formability to the reactive ion etching. The first conductive layer is deposited with a lower deposition rate than the second conductive layer. An interface between the first conductive layer and the high dielectric oxide layer is such that a density of a leak current across the interface is suppressed at not higher than 1×10,A/cm,upon applying a voltage of 2V across the dielectric oxide layer after the multi-layer structure has been subjected to a heat treatment at 350° C.