The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2001

Filed:

Mar. 09, 1998
Applicant:
Inventors:

Tadayosi Kokubo, Fujieda, JP;

Kazuya Okamoto, Yokohama, JP;

Hiroshi Ooki, Yokohama, JP;

Masato Shibuya, Omiya, JP;

Soichi Owa, Tokyo, JP;

Assignee:

Nikon Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 5/24 ; G03F 7/20 ; G03F 7/22 ; G03C 1/73 ;
U.S. Cl.
CPC ...
G03F 5/24 ; G03F 7/20 ; G03F 7/22 ; G03C 1/73 ;
Abstract

Image-formation methods and photosensitive materials used in such methods are disclosed that form very high-resolution patterns. The photosensitive materials comprise an ingredient that is triggered by a radical to undergo a latent-image-forming reaction. The radicals are produced by photons from an illumination light. Alternatively, the ingredient is triggered by a reactive-intermediate compound that is activated by the exposure-produced radical. The photosensitive materials possess a non-linear sensitivity characteristic in which the latent-image reaction density increases according to the m,power (m>1) of the incident light intensity. The photosensitive material can be applied to a sensitive substrate for exposure. Multiple exposures of the sensitive substrate are performed using a projected mask pattern in the presence of a radical deactivator. The multiple exposures can be performed while: (a) changing the exposure intensity distribution on the photosensitive material, or (b) shifting the projected mask pattern and the sensitive substrate relative to each other by a specified amount, or (c) using a different projected mask pattern for each exposure.


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