The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2001

Filed:

Nov. 03, 1999
Applicant:
Inventors:

Eungjoon Park, Fremont, CA (US);

Ali Pourkeramati, Redwood City, CA (US);

Assignee:

Azalea Microelectronics Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/400 ;
U.S. Cl.
CPC ...
G11C 1/400 ;
Abstract

A flash memory device and its method of operation provide for selective, e.g., bit-by-bit, erase operation resulting in much narrower distribution for erase threshold voltage VTE. Latches that couple to the array are set or reset depending on cell content during erase verify. The output of the latches are then applied to selected cells to perform erase. The flash architecture allows for bit-by-bit erase verify operation resulting in a tighter VTE distribution and elimination of the need for preprogramming. In a preferred embodiment, the flash cell is programmed by CHE tunneling and erased by FN tunneling both occurring on the same side (e.g., drain side) of the cell transistor.


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