The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Jun. 13, 1996
Hirokazu Sugihara, Katano, JP;
Makoto Taketani, Kyoto, JP;
Akihito Kamei, Nara, JP;
Hiroshi Iwasaki, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A two-dimensional sensor is described including a substrate having a Si layer, a SiO,layer and a Si,N,layer. On the surface of the Si back side, a thin film is formed by vapor deposition for making an effect electrode. On the surface of the Si,N,front side, a fence is attached for containing a sample cell, culture medium and a reference electrode. This sensor is placed in an incubator and a bias voltage is applied between the effect and reference electrodes. When a high frequency modulated laser beam irradiates a spot on the back side of the sensor substrate, a signal of AC photocurrent is obtained from the effect electrode. This signal corresponds to a potential alteration due to the cell activity substantially at the spot. The signal is processed in a computer. Therefore, the beam spot size and location, corresponding to the size and the location of the measurement electrode, can be adjusted easily by focusing or moving the laser beam.