The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Apr. 03, 1998
Shoichi Iwasa, Tokyo, JP;
Tatsuya Kawamata, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
In a semiconductor device of this invention, a pillar projection serving as a very thin active region is formed on the surface of a p-type silicon semiconductor substrate. A gate electrode,is formed to cover a central portion of the pillar projection. A pair of impurity diffusion layers,are formed on the pillar projection on the two sides of the gate electrode. An element isolation insulating film,is formed to sandwich and bury the side surfaces of the pillar projection. This semiconductor device has high performance equivalent to that of an SOI structure. The semiconductor device of this invention has three channels corresponding to a pair of a source and a drain, is selectively formed on the same semiconductor substrate as a common bulk transistor, and has a very fine structure and high drivability.