The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Jan. 24, 2001
Feng-Yi Huang, Stormville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A BiCMOS integrated circuit is formed with CMOS transistors on an SOI substrate in a silicon layer having a standard thickness of 0.1 &mgr;m to 0.2 &mgr;m and with Bipolar SiGe transistors formed in an epitaxial layer nominally 0.5 &mgr;m thick. The CMOS transistors are formed first with standard processing, then covered with an insulating film. The insulating film is stripped in the bipolar areas and an epitaxial SiGe layer is deposited on the Si substrate. The bipolar transistors are formed using the SiGe epi layer for the base and having an encapsulated structure for device isolation using shallow isolation trenches and the buried oxide.