The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Apr. 21, 1999
Che-Hoo Ng, San Martin, CA (US);
Advanced Mirco Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for determining a dosimetry of a semiconductor substrate is provided which is accurate, reliable, simple and inexpensive. The present invention is especially useful for determining dosimetry of ultra shallow junctions formed using low energy implantation commonly found in sub−0.25 &mgr;m technologies. In a preferred embodiment, a material layer of a thickness is formed over a semiconductor substrate, followed by an ion implantation of a dopant. The material layer is then analyzed using a chemical method such as vapor phase plasma deposition inductively coupled plasma mass spectroscopy with atomic absorption (VPD-ICPMS-AA) to determine the amount of dopant present in the material layer.