The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Dec. 14, 2000
Applicant:
Inventors:
Ki-Yeup Lee, Ichon-shi, KR;
Byoung-Ju Kang, Ichon-shi, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method for manufacturing a trench isolation in a semiconductor device, wherein the method includes the steps of: forming a wide rounded convex shape at an upper portion of the trench by a first etching of high polymerization; forming a vertical sidewall at the middle of the trench by a second etching of low polymerization; and forming a narrow rounded concave shape at the bottom portion of the trench by a third etching of high polymerization, thereby forming the trench isolation.
Lee, Ki-Yeup. (2001). Method for manufacturing shallow trench isolation in semiconductor device (U.S. Patent No. 6287938). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6287938
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile