The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Nov. 23, 1999
Applicant:
Inventors:
Hiroshi Ito, Tokyo, JP;
Isami Sakai, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
According to the present invention, there is disclosed a 2-transistors type flash memory, wherein a memory-transistor is composed of layers of structure consisting of a floating gate and a control gate separated by a first insulating film; and, at least, a gate electrode of a select-transistor is composed of a single layer of a polysilicon film, which is formed from the same layer as the floating gate electrode of the memory-transistor and then doped to have an enhanced dopant concentration by ion implantation performed in the step of forming source-drain regions of the transistors