The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Jun. 03, 1999
Kenji Sera, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
After a polycrystalline silicon film is formed on a glass substrate, the first gate insulating film is formed on the polycrystalline silicon film and the polycrystalline silicon film and the first gate insulating film are patterned into a island shape. Next, impurities are doped into the polycrystalline silicon film through the first gate insulating film using a resist mask, thereby forming the first source-drain region in part of the polycrystalline silicon film. Further, the second gate insulating film is formed on the first gate insulating film and a gate electrode is formed on the second gate insulating film. Thereafter, impurities are lightly doped through the first and second gate insulating films to thereby form the second source-drain region. Thus, no high etching technique is required for the manufacture of a thin film transistor and occurrence of electrostatic damage to the gate insulating films is prevented, to thereby make it possible to improve production yield.