The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Feb. 29, 2000
Evgeni Gousev, Mahopac, NY (US);
Kai Chen, Hopewell Junction, NY (US);
Asit Kumar Ray, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a semiconductor device comprising forming a dielectric layer on an area of a silicon substrate; implanting nitrogen atoms into said dielectric layer; forming a conductive layer of polysilicon over said dielectric layer; annealing the dielectric layer to drive the nitrogen atoms to form a gate dielectric of a dielectric layer having silicon nitride layer interfaces of the dielectric layer and the silicon substrate and the polysilicon layers; and, forming a gate structure in said polysilicon layer and source/drain regions in said silicon substrate, said source/drain regions aligned with said gate structure.