The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Jul. 22, 1999
Applicant:
Inventor:
Kazunori Yoshikawa, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 ;
U.S. Cl.
CPC ...
G03F 7/40 ;
Abstract
A resist pattern is formed on stacked first and second conductive films. After second conductive film is patterned, the patterning of first conductive film follows without removing the remaining resist pattern. Resist pattern is completely removed by etching before the patterning of first conductive film is completed. Thereafter, etching is continued using second conductive film as a mask, and the patterning of first conductive film is completed. Thus, a method of forming a pattern for the semiconductor device in which minute interconnection pattern having a stacked structure is formed without an increase in the number of processing steps can be provided.