The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Jun. 06, 2000
Applicant:
Inventors:
Ariel S. Bentolila, Santa Clara, CA (US);
Sisan Shen, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/40 ;
U.S. Cl.
CPC ...
G05F 1/40 ;
Abstract
An energy efficient gate drive technique for binary push-pull MOSFET switching systems having a common switch node with inductive and capacitive elements connected to this common switch node. These energy storage elements on the common switch node can be parasitic in nature or discrete components. This technique recycles otherwise lost PMOS gate drive energy through the switch node, as a storage element, to the NMOS output FET.
Bentolila, Ariel. (2001). Method to switch mosfets using recycled, parasitic energy (U.S. Patent No. 6285173). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6285173
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile