The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2001

Filed:

Mar. 11, 1998
Applicant:
Inventors:

Masao Takeuchi, Machida City, Tokyo, JP;

Mitsuhiro Tanaka, Chita, JP;

Yuichiro Imanishi, Nagoya, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 4/108 ;
U.S. Cl.
CPC ...
H01L 4/108 ;
Abstract

A surface acoustic wave device including a substrate and an electrode structure formed on the substrate, said substrate being made of an X-cut Langasite single crystal, a rotation Y-cut Langasite single crystal or a double rotation Y-cut Langasite single crystal. When the X-cut Langasite crystal having a large reflection coefficient is used, the electrode structure is formed to constitute a surface acoustic wave resonator. When the rotation Y-cut Langasite crystal having a large electro-mechanical coupling coefficient and a small reflection coefficient is used, the electrode structure is formed to constitute a surface acoustic wave filter. When the double rotation Y-cut Langasite crystal having an NSPUDT property is used, the electrode structure is formed to constitute a surface acoustic wave filter having a low insertion loss and an excellent phase property.


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