The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
May. 30, 1995
Kent J. Cooper, Austin, TX (US);
Scott S. Roth, Austin, TX (US);
Other;
Abstract
The horizontal surface area required to contact semiconductor devices, in integrated circuits fabricated with trench isolation, is minimized without degrading contact resistance by utilizing the vertical surface area of the trench sidewall. A trench isolation region (,) is formed within the semiconductor substrate (,). A doped region (,) is then formed such that it abuts the trench sidewall (,). A portion (,) of the trench sidewall (,), abutting the doped region (,), is then exposed by forming a recess (,) within the trench isolation region (,). A conductive member (,) is then formed such that it is electrically coupled to the doped region (,) along the exposed trench sidewall, as well as along the major surface (,) of the semiconductor substrate (,), and results in the formation of a low resistance contact structure.