The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Sep. 26, 1997
Donald A. Draper, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An integrated capacitor includes a device region of first conductivity type in a semiconductor substrate, a source/drain region of the first conductivity type in the device region with a higher doping concentration than the device region, a gate insulator over the device region, and a gate over the gate insulator. A first terminal is coupled to the source/drain region, and a second terminal is coupled to the gate. Advantageously, the integrated capacitor is operated with the device region beneath the gate driven into accumulation instead of inversion. This allows a lower voltage to be applied to the gate, which allows for a thinner gate insulator to be used resulting in higher capacitance per unit area. Furthermore, since the device region is much thicker and more highly conductive than an inversion layer, the integrated capacitor has greatly improved frequency response.