The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2001

Filed:

Nov. 04, 1999
Applicant:
Inventor:

Glenn B. Alers, Santa Cruz, CA (US);

Assignee:

Agere Systems Guardian Corp., Orlando, FL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/13065 ;
Abstract

An electronic device having an improved capacitor structure is formed by depositing a metal layer defining a first electrode on a film of high dielectric constant material, and then depositing the dielectric layer of the capacitor structure on the first electrode. This resulting structure is then exposed to a nitrogen plasma and the top electrode is formed. Exposing the first electrode to a plasma of pure nitrogen prevents the partial oxidation of the first electrode and reduces the density of charge traps at the electrode/dielectric interface. The dielectric film is passivated with the nitrogen material before forming the top electrode to prevent interdiffusion between the electrode and the dielectric.


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