The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Sep. 28, 1999
Kaoru Mikagi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of forming a cobalt silicide layer on a silicon region comprises the steps of: forming a TEOS oxide film on a surface of the silicon region; carrying out an ion-implantation process for implanting ions through the TEOS oxide film into the silicon region; carrying out a heat treatment to activate the ions implanted in the silicon region, whereby a silicidation reaction inhibitor layer concurrently formed on an interface between the TEOS oxide film and the surface of the silicon region; carrying out a dry etching to remove laminations of the TEOS oxide film and the silicidation reaction inhibitor layer from the surface of the silicon region; carrying out a cleaning process for cleaning the surface of the silicon region by subjecting the surface of the silicon region to an acidic solution and subsequently to a diluted hydrofluoric acid solution; and forming a cobalt silicide layer on the surface of the silicon region.