The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Jan. 21, 2000
Timothy Z. Hossain, Austin, TX (US);
Amiya R. Ghatak-Roy, Austin, TX (US);
Jason B. Zanotti, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A tungsten gate electrode and method of fabricating the same are provided. In one aspect, a method of fabricating a gate electrode stack on a substrate is provided that includes forming an insulating film on the substrate and forming a conductor film on the insulating film by initially depositing a film of amorphous silicon and amorphous tungsten, and thereafter depositing a film of polycrystalline tungsten on the film and annealing the substrate to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film. The tungsten silicide film and the polycrystalline tungsten film are patterned to define the gate electrode stack. The method enables the seamless fabrication of an adhesion layer and a tungsten gate in a single chamber and without resort to titanium.