The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Aug. 09, 1999
Ko Noguchi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes (a) providing a semiconductor substrate of a first conductive type, (b) forming a field insulating film on the semiconductor substrate, and (c) providing a first region and a second region in which the field insulating film is not formed on the semiconductor substrate. Also, the method includes (d) forming a gate insulating film on both the first region and the second region at a same time, (e) removing the gate insulating film formed on the second region to expose a surface portion of the semiconductor substrate, and (f) forming a diffusion layer of the first conductive type in the second region from which the gate insulating film is removed. Further, the method includes (g) forming a gate electrode after the (f) step such that the gate electrode is in contact with at least a portion of respective the first region and the second region and (h) changing the diffusion layer into a diffusion layer of a second conductive type different from the first conductive type, after the (g) step.