The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Dec. 30, 1998
Yong Sik Yu, Kyoungkido, KR;
Abstract
The present invention relates to a highly integrated memory device; and, more particularly, to a ferroelectric capacitor memory device capable of improving an electrical interconnection between a lower electrode and an active region of a cell transistor. In accordance with an aspect of the present invention, there is provided a method for fabricating a semiconductor capacitor, comprising the steps of: forming a lower electrode of the semiconductor capacitor; forming a ferroelectric film on the lower electrode, wherein the first ferroelectric film bears a volatile element; forming a capping oxide film on the ferroelectric film; applying a rapid thermal process to the ferroelectric film and the capping oxide film; and cooling the ferroelectric film, whereby a preferred orientation of atoms in the ferroelectric film and domain boundaries thereof are perpendicular to a semiconductor substrate for which the semiconductor capacitor is provided.