The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Jun. 09, 2000
Applicant:
Inventor:
Shinobu Takehiro, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
In a pretreatment process, a silicon oxide film (,) with nitrogen content is formed on a semiconductor substrate (,). In a segregation process executing heat treatment in an inert gas atmosphere, a silicon nitride layer (,) segregates out at the interface of the silicon substrate (,) and the silicon oxide film (,). In a high dielectric film forming process, the unnecessary silicon oxide film (,) on the silicon nitride layer (,) is removed, a high dielectric oxide layer (,) is formed on the exposed silicon nitride layer (,). Whereby, a gate electrode (,) consisting of the silicon nitride layer (,) and the high dielectric oxide layer (,) is formed.