Hdi chip attachment method for reduced processing

Abstract

A method according to an aspect of the invention, for interconnecting electrical contacts or electrodes (,) of semiconductor chips (,) in an HDI context, includes the step of applying laser energy to make a pattern of apertures through a dielectric film which corresponds to the ideal locations of electrodes of semiconductor chips properly placed on the film. This may be accomplished, in one mode of the method, by procuring an optical mask (,) defining an ideal pattern of electrodes of semiconductor chips properly aligned in an HDI structure. This mask may be sufficiently large to cover a plurality of HDI circuits being made on a substrate, or it may cover only one such HDI circuit. Laser energy (,) is applied to a dielectric film (,) through apertures or transparent regions (,) of the mask, to thereby make the ideal pattern of holes in the film. Semiconductor chips (,) are mounted to a first side (,) of the dielectric film, as by means of adhesive, with the electrodes (,) in registry with the corresponding ones of the holes (,). This has the effect of mounting the semiconductor chips (,) in their ideal locations. Electrically conductive material (,), such as metallization, is applied to a second side (,) of the film (,) and to at least the sides of the holes (,), so as to interconnect the electrodes (,) with an interconnect pattern (,) of the electrically conductive material (,).