The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Jul. 28, 2000
Jin-hong Kim, Taeseon, KR;
Seong-ihl Woo, Taeseon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
An etching gas mixture for a transition metal thin film, and an etching method using the etching gas mixture are provided. The etching gas mixture is composed of two gases. The first gas is one selected from the group consisting of halogen gas, halide gas, halogen gas mixture, halide gas mixture and gas mixture of halogen and halide. The second gas is one selected from the group consisting of carbon oxide gas, hydrocarbon gas, nitrogen oxide gas and nitrogen-containing gas. The etching gas mixture reacts with the transition metal thin film to form a highly volatile metal halide, so that a fine pattern can be formed with a high selectivity.