The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Dec. 18, 1998
Nobuyuki Yoshitake, Kagoshima, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device comprising an isolating layer (diffusion layer) having a deep depth which can be produced with improved productivity and a method of the same. The semiconductor device comprises a semiconductor substrate of a first conductivity type; a first diffusion layer of a second conductivity type formed in the semiconductor substrate; a first semiconductor layer formed on the semiconductor substrate; a second diffusion layer of the second conductivity type formed in the first semiconductor layer and connected to the first diffusion layer; and a second semiconductor layer formed on the first semiconductor layer; the second semiconductor layer being electrically isolated from the semiconductor substrate by the first diffusion layer and the second diffusion layer.