The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Jul. 30, 1998
Hirokazu Sayama, Tokyo, JP;
Masao Nishida, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A high-voltage element (H)to which a high gate voltage is applied, and a low-voltage element (L) to which a low gate voltage is applied, are formed in a semiconductor substrate (,). Bird's beaks (,) are formed in gate insulating films (,) by thermal oxidation. Since a gate electrode (,) of the element (H) has a shorter gate length than a gate electrode (,) of the element (L), the ratio of the bird's beak in the gate insulating films (,) is small in the element (L) and large in the element (H). Therefore, the element (H) has a high breakdown voltage and less aged deterioration, leading to long lifetime. The element (L) has a high current driving capability to produce high-speed operation. Thus, long lifetime, high operation speed and easy manufacturing steps are realized at the same time.