The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Jun. 24, 1999
Applicant:
Inventor:
Neil Davies, Sonnenbuehl-Genkingen, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A MOSFET component used to switch high currents includes a current path that is parallel-connected to the base-emitter link of the parasitic bipolar transistor, extracts the minority charge carriers, and prevents the parasitic transistor from being biased into conduction.
Davies, Neil. (2001). Mosfet component (U.S. Patent No. 6281549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6281549
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile