The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Feb. 15, 1999
Shye-Lin Wu, Hsinchu, TW;
TSMC-Acer Semiconductor Manufacturing Corp., Hsinchu, TW;
Abstract
A structure of a capacitor on a semiconductor wafer including the following structure is disclosed herein. A first electrode including a flower structure is formed on the semiconductor wafer. The first electrode includes a flower neck portion, a flower bottom portion, and a flower top portion. The flower neck portion is electrically coupled to the semiconductor wafer. The flower bottom portion is electrically coupled to the flower neck portion, in which the flower bottom portion includes a first protudent portion. The flower top portion includes a downward hemispherical portion and a second protrudent portion, and is electrically coupled to the flower neck portion. The flower bottom portion is formed of titanium nitride, and the flower top portion is formed of Ti/TiN or TiW. A first dielectric film is formed on the first electrode, and the first dielectric layer is the dielectric layer of the capacitor. A second electrode is formed on the first dielectric film.