The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Apr. 13, 1999
Jae Whan Kim, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
The present invention provides an improved ferroelectric capacitor used in a memory device by providing reliable electric interconnection between a lower electrode of the capacitor and an active region of transistor, and to provide a method for fabricating the same. A semiconductor capacitor according to the present invention comprises: a first conducting film filling an opening which is formed in an interlayer insulating film, being in contact with an active region of a semiconductor; a stacked charge storage node including a second conducting film formed on the first conducting film and an interlaying insulating film, a first diffusion preventing film formed on the second conducting film, a lower electrode film formed on the first diffusion preventing film, and a ferroelectric film formed on the lower electrode film; and a conducting spacer film formed on sidewalls of the lower electrode film, the first diffusion preventing film and the second conducting film.