The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Aug. 10, 1999
Applicant:
Inventor:
F. Scott Johnson, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10336 ; H01L 3/1119 ; H01L 2/900 ; H01L 2/7082 ; H01L 3/10288 ;
U.S. Cl.
CPC ...
H01L 3/10336 ; H01L 3/1119 ; H01L 2/900 ; H01L 2/7082 ; H01L 3/10288 ;
Abstract
A lateral PNP transistor (LPNP) (,) having the low resistance base buried N+ region (,) removed from below the emitter region (,). This leaves a high resistance n-well (,) below the emitter. The resistance from the center of the emitter region (,) to the N+ buried region (,) is greater than the resistance at the periphery of the emitter region (,) to the N+ buried region (,). Debiasing will occur in the center of the emitter region (,) where the parasitic base current is generated. Thus, the ratio of parasitic current to active collector current and peak beta will improve.