The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Oct. 25, 1999
Applicant:
Inventors:
Yong-ju Choi, Seoul, KR;
Jeong-hyuk Choi, Suwon, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for manufacturing a nonvolatile memory device is provided. After forming an etching damage prevention layer on the entire surface of a stacked gate structure and on the entire surface of a semiconductor substrate, a self-aligned source etching process is performed. Thus, damage to side walls of the stacked gate structure and an active region can be prevented during the self-aligned source etching process.
Quick Actions:
Choi, Yong-ju. (2001). Method for manufacturing nonvolatile memory device capable of preventing damage to side walls of stacked gate and active region (U.S. Patent No. 6281076). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6281076
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile