The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Jul. 14, 2000
Young Jun Lee, Cheongju, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
The present invention relates to a method for fabricating a semiconductor device, and in particular to a method for fabricating a bit line and a capacitor of a DRAM cell including: a step of forming contact holes on a first insulation film formed on a semiconductor substrate; a step of forming plugs in the contact hole; a step of forming a contact hole on a second insulation film formed on the first insulation film; a step of forming a bit line and a third insulation film pattern on the second insulation film; a step of forming spacers at the side portions of the third insulation film pattern and the contact holes; a step of forming a fourth insulation film pattern; a step of sequentially forming a third conductive film and a fifth insulation film; a step of removing the third conductive film and the fifth insulation film in order to expose the upper surface of the fourth insulation film pattern; a step of removing the fourth insulation film and the fifth insulation film; and a step of sequentially forming a sixth insulation film and a fourth conductive film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile