The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2001

Filed:

Dec. 20, 1999
Applicant:
Inventors:

Han Sang Song, Yongin-shi, KR;

Chan Lim, Ichon-shi, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract

There is disclosed a method of manufacturing a capacitor of a semiconductor device by which a CVD TiN film and a MOCVD TiN film, and a polysilicon film are sequentially stacked in forming an electrode on a Ta,O,dielectric thin film. Therefore, it can prevent changes in thickness of the effective oxide film of the Ta,O,capacitor against the characteristics of each of the CVD TiN film and the MOCVD TiN film, even after a rapid thermal process. It can also improve the step coverage, thus greatly improving the stability and reliability of the capacitor.


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