The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Apr. 20, 2000
Toshiki Shinmura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
According to a semiconductor device manufacturing method, the surface of a silicon substrate is defined by an element isolation region, a gate oxide film and a polysilicon film are formed, and then a titanium nitride film is formed on the polysilicon film at a substrate temperature of 400° C. to 600° C. by collimate sputtering. A titanium silicide film is further formed on the titanium nitride film. A stacked film structure constituted by the titanium silicide film, titanium nitride film, and polysilicon film is patterned to form a gate electrode. After that, an LDD side wall is formed. Since the titanium nitride film is formed in this manner by collimate sputtering, a titanium nitride film, with which the breakdown voltage of the gate oxide film is not decreased and which has a high barrier performance, can be realized. When titanium polycide using a titanium nitride barrier is applied to a DRAM, low-resistance word lines can be formed, so that a DRAM having a high degree of integration can be obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile