The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Mar. 09, 2000
Eiji Sakagami, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A nitride film (,A) as a had pattern mask in a peripheral transistor forming region and a cell transistor forming region is narrowed by A,into a narrower nitride film (,B) by pull-back. While the narrower oxide film (,B) in the cell transistor forming region is covered by an oxide film (,), the narrower nitride film (,B) in the peripheral transistor forming region is further narrowed by A,into a still narrower nitride film (,C) by pull-back. By making apertures (,A,,B) in a buried oxide film (,) by using the narrower nitride film (,B) and the still narrower nitride film (,C), STI edges made of the buried oxide film (,) can be prevented from depressing or falling down.