The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Dec. 23, 1997
Masaji Asaumi, Kyoto, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A solid-state image device comprises a plurality of photoelectric converters arranged on a semiconductor substrate; a plurality of vertical charge coupled devices (CCDs) that receive signal charges from the photoelectric converters and transfer the signal charges; a horizontal CCD that receives the signal charges transferred by the vertical CCDs and transfers the signal charges in the direction crossing the vertical CCDs; and a signal output circuit that receives the signal charge transferred by the horizontal CCD and outputs the signal voltage corresponding to the signal charge. The vertical CCD has a normal mode for transferring the signal charges synchronizing with the horizontal CCD and a high-speed mode for transferring the signal charges quickly without synchronizing with the horizontal CCD. A potential barrier region and a charge drain region are formed along the side of the horizontal CCD opposite to the connection side with the vertical CCDs. The charge drain region has a resistance R and a capacitance C such that their product value RC is smaller than substantially ten times of the transfer period of the vertical CCD in the high-speed mode.