The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Mar. 01, 1999
Toshimasa Kobayashi, Kanagawa, JP;
Tsuyoshi Tojo, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges of cleaves surfaces in the semiconductor layer stacked on a substrate even when the substrate is non-cleavable, difficult to cleave or different in cleavable orientation from the semiconductor layer. A semiconductor layer,made of III-V compound semiconductors is stacked to form a laser structure on a sapphire substrate,In selective locations other than the location of a ridge stripe portion,and a mesa portion,along a portion of a semiconductor layer,where a cavity edge,should be made, namely, in locations at opposite sides of the mesa portion,stripe-shaped cleavage-assist grooves,are made to extend in parallel to the (,-,)-oriented surface of the semiconductor layer,and the semiconductor layer,and the sapphire substrate,are cleaved from the cleavage-assist groove,to make the cavity edge,made up of the cleavable surface of the semiconductor layer