The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Dec. 01, 1999
Hisayuki Kato, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A gate oxide film,and a gate electrode,are formed on a surface of a P-type substrate,. A concave portion,is provided in a region of the P-type substrate,, the region being contiguous to the gate electrode,. On the P-type substrate,, an N-type drain region,is disposed on the opposite side of the gate electrode,from the concave portion,. N-type impurities are implanted into the P-type substrate,at a predetermined angle relative to the latter, thereby forming an N-type region,which includes a region underneath the concave portion,and which is partially submerged beneath the gate oxide film,. P-type impurities are then implanted into the P-type substrate,at right angles to the latter, thus forming a P-type region,which includes a region underneath the concave portion,while covering the N-type region,and which forms a PN junction diode in combination with the N-type region