The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Jun. 30, 1999
Applicant:
Inventors:
Eizo Mitani, Yamanashi, JP;
Hiroyuki Oguri, Yamanashi, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9778 ; H01L 2/904 ;
U.S. Cl.
CPC ...
H01L 2/9778 ; H01L 2/904 ;
Abstract
An enhancement-mode semiconductor device includes a barrier layer formed on a channel layer and a gate electrode provided on the barrier layer, wherein the gate electrode is formed with an orientation chosen so as to maximize a threshold voltage of the semiconductor device.
Mitani, Eizo. (2001). Enhancement-mode semiconductor device (U.S. Patent No. 6278141). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6278141
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile